RAPID THERMAL LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SIOX FILMS ONTO INP

High quality SiO(x) films have been deposited onto InP substrates by means of a rapid thermal low-pressure chemical vapor deposition technique, using oxygen (02) and 2% diluted silane (SiH4) in argon (Ar) in the gas sources. Rapid deposition rates in the range of 15-40 nm s-1 with apparent activation energies of 0.12-0.15 eV were obtained at temperatures in the range of 350-550-degrees-C, pressures between 5 and 15 Torr, and O2:SiH4 ratios in the range of 5:1-20:1. The SiO(x) films had refractive indexes between 1.44 and 1.50, densities of 2.25-2.37 g cm-3, internal compressive stresses of -0.5 X 10(9) to -3 x 10(9) dyn cm-2, and exhibited wet etch rates of 0.2-0.8 nm s-1 through the standard p-etch process. The influence of the various process parameters on all the SiO(x) film parameters such as morphology and microstructure was examined.