HYDROGEN ANNEALING OF TRANSPARENT GATE MOS DIODES

被引：2
|
作者：
TAKATO, H
ISHII, K
HAYASHI, Y
机构：
[1] Electrotechnical Laboratory, Tsukuba, ibaraki
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 11期
关键词：
Flat-band voltage; Hydrogen annealing; Interface state density; Transparent gate MOS diode;
D O I：
10.1143/JJAP.29.L1984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Transparent gate (indium tin oxide) MOS diodes were annealed in hydrogen ambient at temperatures ranging from 200 to 500°C. Decrease of interface state density and positive shifts of flat-band voltage were observed. © 1990 IOP Publishing Ltd.
引用
收藏
页码：L1984 / L1986
页数：3
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