NITRIDIZATION OF GALLIUM-ARSENIDE SURFACES - EFFECTS ON DIODE LEAKAGE CURRENTS

被引：24
|
作者：
PEARTON, SJ
HALLER, EE
ELLIOT, AG
机构：
[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720
[2] HEWLETT PACKARD CO,DIV OPTOELECTR,PALO ALTO,CA 94304
来源：
APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 07期
关键词：
D O I：
10.1063/1.94877
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：684 / 686
页数：3
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