PHONON DENSITY OF STATES OF AMORPHOUS-SILICON

被引：7
|
作者：
SHANKS, HR
KAMITAKAHARA, WA
MCCLELLAND, JF
CARLONE, C
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期
关键词：
D O I：
10.1016/0022-3093(83)90555-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：197 / 200
页数：4
相关论文
共 50 条
  • [21] THE DEFECT DENSITY IN AMORPHOUS-SILICON
    STUTZMANN, M
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (04): : 531 - 546
  • [22] DENSITY OF STATES FROM JUNCTION MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON
    COHEN, JD
    SEMICONDUCTORS AND SEMIMETALS, 1984, 21 : 9 - 98
  • [23] DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED FROM TRANSPORT EXPERIMENTS
    OVERHOF, H
    BEYER, W
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 375 - 380
  • [24] DENSITY OF STATES NEAR MID GAP IN HYDROGENATED AMORPHOUS-SILICON
    YAHYA, E
    SHANKS, HR
    SOLAR ENERGY MATERIALS, 1987, 16 (1-3): : 189 - 198
  • [25] DENSITY OF ELECTRON-STATES OF INTRINSIC HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    IKRAMOV, RG
    KAZANIN, MM
    MEZDROGINA, MM
    SEMICONDUCTORS, 1993, 27 (03) : 260 - 262
  • [26] DENSITY-OF-STATES AND TRANSIENT SIMULATIONS OF AMORPHOUS-SILICON DEVICES
    SHAW, JG
    HACK, M
    LECOMBER, PG
    WILLUMS, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 : 1233 - 1236
  • [27] PHOTOCONDUCTIVITY MEASUREMENTS AS A TOOL FOR THE EVALUATION OF THE DENSITY OF STATES IN AMORPHOUS-SILICON
    AUGELLI, V
    BERARDI, V
    MURRI, R
    SCHIAVULLI, L
    PHYSICA SCRIPTA, 1988, 38 (02): : 188 - 190
  • [28] SPECIFIC DISPLACEMENTS OF CARRIERS AND DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    BABAKHODZHAEV, US
    KAZANIN, MM
    MEZDROGINA, MM
    ARLAUSKAS, K
    YUSHKA, G
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 332 - 333
  • [29] DEFECT CHEMICAL-POTENTIAL AND THE DENSITY OF STATES IN AMORPHOUS-SILICON
    DEANE, SC
    POWELL, MJ
    PHYSICAL REVIEW LETTERS, 1993, 70 (11) : 1654 - 1657
  • [30] STRUCTURAL NETWORK, FERMI LEVEL, AND DENSITY OF STATES IN AMORPHOUS-SILICON
    GOLIKOVA, OA
    DOMASHEVSKAYA, EP
    KAZANIN, MM
    KUDOYAROVA, VK
    MEZDROGINA, MM
    SOROKINA, KL
    TEREKHOV, VA
    TROSTYANSKII, SN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (03): : 281 - 284
12345