EFFECT OF RELAXATION ON ELECTRONIC-ENERGY-LEVEL STRUCTURE OF SI(111) SURFACE

被引:20
|
作者
BATRA, IP [1 ]
CIRACI, S [1 ]
机构
[1] IBM CORP,RES LAB,SAN JOSE,CA 95193
关键词
D O I
10.1103/PhysRevLett.36.170
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:170 / 173
页数:4
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