EFFECT OF RELAXATION ON ELECTRONIC-ENERGY-LEVEL STRUCTURE OF SI(111) SURFACE

被引：20
|
作者：
BATRA, IP [1 ]
CIRACI, S [1 ]
机构：
[1] IBM CORP,RES LAB,SAN JOSE,CA 95193
来源：
PHYSICAL REVIEW LETTERS | 1976年 / 36卷 / 03期
关键词：
D O I：
10.1103/PhysRevLett.36.170
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：170 / 173
页数：4
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