RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS

被引：71
|
作者：
CHEUNG, JT [1 ]
MAGEE, T [1 ]
机构：
[1] ADV RES & APPLICAT CORP, SUNNYVALE, CA 94086 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1983年 / 1卷 / 03期
关键词：
D O I：
10.1116/1.572276
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：1604 / 1607
页数：4
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