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CW INJECTION SEEDING OF A MODELOCKED SEMICONDUCTOR-LASER
被引:12
|作者:
JONECKIS, LG
HO, PT
BURDGE, GL
机构:
[1] Lab for Phys Sci, College Park, MD,
关键词:
D O I:
10.1109/3.83386
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
We have extended the injection locking technique to control the output of a modelocked semiconductor laser with an external CW signal. With this injection seeding technique, we have obtained over 8 mW of average power in 30 ps pulses with side cluster suppression of over 20 dB from an actively modelocked AlGaAs semiconductor laser. This average output power compares favorably with the 12 mW CW output power of the extended resonator. The frequency spectrum of the laser is determined by the background noise level as set by the spontaneous emission. Injection seeding overrides the noise and concentrates over 99% of the available energy in a single nearly transform-limited pulse.
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页码:1854 / 1858
页数:5
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