NON-UNIFORMITY OF SURFACE-STATE DENSITY IN THE CHANNEL OF CMOS TRANSISTORS

被引：3
|
作者：
BALLAND, B [1 ]
PLOSSU, C [1 ]
CHOQUET, C [1 ]
LUBOWIECKI, V [1 ]
LEDYS, JL [1 ]
机构：
[1] MATRA HARRIS SEMICOND,CTR ELECTR,F-44075 NANTES,FRANCE
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1988年 / 23卷 / 11期
关键词：
D O I：
10.1051/rphysap:0198800230110183700
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1837 / 1845
页数：9
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