FORMATION OF RARE-EARTH-METAL SILICIDE FILMS AND PROPERTIES OF THE SILICIDE SILICON PHASE-BOUNDARY

被引：0
|
作者：
MILYUTKIN, EA
ROZHKOV, VA
机构：
[1] Kuibyshev State Univ, USSR, Kuibyshev State Univ, USSR
来源：
SOVIET MICROELECTRONICS | 1985年 / 14卷 / 01期
关键词：
MICROELECTRONICS - RARE EARTH COMPOUNDS - SEMICONDUCTING FILMS - SEMICONDUCTOR DEVICES - Junctions - SOLID STATE DEVICES; THIN FILM;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present paper is dedicated to the investigation of the process of formation of thin films of gadolinium and dysprosium silicides on a silicon surface and to the study of the electrophysical properties of the silicide - silicon phase boundary.
引用
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页码：23 / 26
页数：4
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