INFRARED-ABSORPTION SPECTRUM OF SINGLY IONIZED MAGNESIUM DONORS IN SILICON

被引:7
|
作者
HO, LT
LIN, FY
LIN, WJ
机构
[1] Institute of Physics, Academia Sinica, Taipei
关键词
D O I
10.1007/BF02084585
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The infrared absorption spectrum of singly ionized magnesium donor impurities in silicon has been measured. Due to better sample preparation and higher resolution of the instrument, the absorption spectrum obtained is much better than previous reports. Some new lines have been observed and identified. Besides the 2p+/- line, the 3p+/- line has also been observed for the first time to be a doublet indicating that the excited state np+/- splits into two states due to chemical splitting.
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页码:1099 / 1106
页数:8
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