Reactive diffusion between monocrystalline 6H-SiC and chromium

被引：7
|
作者：
Bhanumurthy, K
SchmidFetzer, R
机构：
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 51卷 / 01期
关键词：
chromium; monocrystalline; 6HSiC; diffusion path; stability diagram;
D O I：
10.1016/0924-4247(96)80047-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Interface reactions between chromium and monocrystalline 6H-SiC were studied in the temperature range of 1000-1200 degrees C for 24-192 h duration. The reaction layers were characterised by XRD and SEM/EDX techniques. The sequence of reaction layers as observed in the diffusion couples, Cr/Cr23C6/Cr7C3/Cr7C3 + Cr3Si/Cr3Si/Cr5Si3C/SiC, could be related to the isothermal section at 1000 degrees C. A stability diagram was constructed for the Cr-Si-C system at 1000 degrees C, based on the available thermodynamic data by plotting the logarithm of activities of C as a function of relative mole fractions of X(Si) and X(Cr). Based on the thermodynamic calculations and the stability map, interpretations pertaining to the observed diffusion paths are discussed.
引用
收藏
页码：25 / 27
页数：3
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