STUDIES OF THE FRACTIONAL QUANTUM HALL-EFFECT IN A SILICON MOSFET

被引：11

作者：

FURNEAUX, JE

SYPHERS, DA

BROOKS, JS

SCHMIEDESHOFF, GM

WHEELER, RG

STILES, PJ

机构：

[1] UNIV OREGON,EUGENE,OR 97403

[2] BOSTON UNIV,WALTHAM,MA 02154

[3] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

[4] YALE UNIV,NEW HAVEN,CT 06520

[5] BROWN UNIV,PROVIDENCE,RI 02912

来源：

关键词：

D O I：

10.1016/0039-6028(86)90955-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：154 / 159

页数：6

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