ELEMENT-SPECIFIC DIAGNOSIS USING MICROWAVE REFLECTION PHOTOCONDUCTIVE DECAY

被引:9
|
作者
KOSTER, L
BLOCHL, P
FABRY, L
机构
关键词
RECOMBINATION LIFETIME; PHOTO-CONDUCTIVE DECAY; RECOMBINATION CENTER; INJECTION LEVEL; CALIBRATION; SEMICONDUCTOR SILICON;
D O I
10.1143/JJAP.34.932
中图分类号
O59 [应用物理学];
学科分类号
摘要
Applying element specific drive-in treatments before the microwave reflection photo-conductive decay(mu-PCD) analysis recombination centers can be assigned to metallic contaminants, which have a degrading influence on the recombination lifetime (tau). Element specific information can further be obtained by variation of the injection level (injection level spectroscopy). Comparison of measured and calculated lifetimes using the Schockley-Read-Hall-recombination model allows the identification of Fe as lifetime Killer. Correlating the lifetime with sample thickness data provides the possibility of absolute lifetime calibration.
引用
收藏
页码:932 / 936
页数:5
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