HIGH-TEMPERATURE AND HIGH-POWER PERFORMANCE OF INGAASP/INP RIDGE-WAVE-GUIDE LASER-DIODES

The device design of InGaAsP laser diodes is discussed revealing the carrier density at threshold as the dominating laser parameter which determines the high-temperature and high-power performance of laser diodes. The dependence of these performances on the mirror reflectivities, the resonator cavity dimensions, and the mounting techniques is demonstrated by experimental results obtained from ridge-waveguide (RW) lasers. A proper design of RW lasers yields CW operation up to a heat sink temperature of 100-degrees-C (85-degrees-C) with 3 mW output power at 1.3-mu-m (1.55-mu-m) emission wavelength. A high output power exceeding 100 mW at room temperature is achieved with 1.3-mu-m RW lasers. The junction-up mounting and the comparatively simple fabrication technique of the RW laser structure favours these lasers for mass production. Due to its high-temperature performance, high modulation capability and excellent reliability the presented RW lasers are very promising candidates for future customer access systems.