ELECTRONIC-STRUCTURE AND DEEP IMPURITY LEVELS IN [111] GAAS/ALXGA1-XAS SEMICONDUCTOR SUPERLATTICES

被引：12
|
作者：
REN, SY
DOW, JD
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 05期
关键词：
D O I：
10.1063/1.343418
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1987 / 1995
页数：9
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