首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
PLASMA-ETCHING OF SIO2-FILMS FOR CONTACT HOLES IN VLSI
被引:0
|
作者
:
ALBIN, S
论文数:
0
引用数:
0
h-index:
0
ALBIN, S
机构
:
来源
:
GEC JOURNAL OF RESEARCH
|
1983年
/ 1卷
/ 03期
关键词
:
D O I
:
暂无
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:178 / 183
页数:6
相关论文
共 50 条
[1]
INSITU ELLIPSOMETRY DURING PLASMA-ETCHING OF SIO2-FILMS ON SI
HAVERLAG, M
论文数:
0
引用数:
0
h-index:
0
HAVERLAG, M
KROESEN, GMW
论文数:
0
引用数:
0
h-index:
0
KROESEN, GMW
DEZEEUW, CJH
论文数:
0
引用数:
0
h-index:
0
DEZEEUW, CJH
CREYGHTON, Y
论文数:
0
引用数:
0
h-index:
0
CREYGHTON, Y
BISSCHOPS, THJ
论文数:
0
引用数:
0
h-index:
0
BISSCHOPS, THJ
DEHOOG, FJ
论文数:
0
引用数:
0
h-index:
0
DEHOOG, FJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1989,
7
(03):
: 529
-
533
[2]
Plasma-etching profile model for SiO2 contact holes
Liu, CL
论文数:
0
引用数:
0
h-index:
0
机构:
Washington Univ, Dept Elect Engn, St Louis, MO 63130 USA
Washington Univ, Dept Elect Engn, St Louis, MO 63130 USA
Liu, CL
Abraham-Shrauner, B
论文数:
0
引用数:
0
h-index:
0
机构:
Washington Univ, Dept Elect Engn, St Louis, MO 63130 USA
Washington Univ, Dept Elect Engn, St Louis, MO 63130 USA
Abraham-Shrauner, B
IEEE TRANSACTIONS ON PLASMA SCIENCE,
2002,
30
(04)
: 1579
-
1586
[3]
ELECTRICAL ENDPOINT DETECTION OF VLSI CONTACT PLASMA-ETCHING
CHANG, G
论文数:
0
引用数:
0
h-index:
0
CHANG, G
MCVITTIE, JP
论文数:
0
引用数:
0
h-index:
0
MCVITTIE, JP
WALKER, JT
论文数:
0
引用数:
0
h-index:
0
WALKER, JT
DUTTON, RW
论文数:
0
引用数:
0
h-index:
0
DUTTON, RW
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(12)
: 514
-
517
[4]
EFFECTS OF CF4 PLASMA-ETCHING OF SIO2 ON THE PROPERTIES OF MOS STRUCTURES FORMED ON THE REMAINING SIO2-FILMS
TOKUDA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
TOKUDA, Y
YAMANE, H
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
YAMANE, H
USAMI, A
论文数:
0
引用数:
0
h-index:
0
机构:
NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
USAMI, A
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1985,
18
(01)
: L1
-
L4
[5]
ADVANCES IN VLSI PLASMA-ETCHING
LAM, DK
论文数:
0
引用数:
0
h-index:
0
LAM, DK
SOLID STATE TECHNOLOGY,
1982,
25
(04)
: 215
-
219
[6]
BREAKDOWN OF SIO2-FILMS IN VLSI MOS STRUCTURES
SUNE, J
论文数:
0
引用数:
0
h-index:
0
SUNE, J
PLACENCIA, I
论文数:
0
引用数:
0
h-index:
0
PLACENCIA, I
FARRES, E
论文数:
0
引用数:
0
h-index:
0
FARRES, E
BARNIOL, N
论文数:
0
引用数:
0
h-index:
0
BARNIOL, N
AYMERICH, X
论文数:
0
引用数:
0
h-index:
0
AYMERICH, X
VACUUM,
1989,
39
(7-8)
: 765
-
769
[7]
PLASMA-ETCHING OF REFRACTORY GATES FOR VLSI APPLICATIONS
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
CHOW, TP
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12181
STECKL, AJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1984,
131
(10)
: 2325
-
2335
[8]
PROFILE CONTROL IN PLASMA-ETCHING OF SIO2
CASTELLANO, RN
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,INTEGRATED CIRCUIT LAB,PALO ALTO,CA 94304
STANFORD UNIV,INTEGRATED CIRCUIT LAB,PALO ALTO,CA 94304
CASTELLANO, RN
SOLID STATE TECHNOLOGY,
1984,
27
(05)
: 203
-
206
[9]
PLASMA-ETCHING FOR SIO2 PROFILE CONTROL
BONDUR, JA
论文数:
0
引用数:
0
h-index:
0
BONDUR, JA
CLARK, HA
论文数:
0
引用数:
0
h-index:
0
CLARK, HA
SOLID STATE TECHNOLOGY,
1980,
23
(04)
: 122
-
128
[10]
SHAPING OF PROFILES IN SIO2 BY PLASMA-ETCHING
BONDUR, JA
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
BONDUR, JA
FRIESER, RG
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533
FRIESER, RG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(03)
: C89
-
C89
←
1
2
3
4
5
→