ELECTRON-TRANSPORT IN INP UNDER HIGH ELECTRIC-FIELD CONDITIONS

In view of the importance of InP as a new material that is especially appropriate for very high frequency applications, a Monte Carlo method has been applied to analyse its electron transport properties at very high electric fields, using a five-valley model for the conduction band. Two of these valleys (X7, GAMMA-7*) have not been used in previous simulations. The model is shown to be valid too for low fields. The high field results point to the great importance of the X7 valley (higher than in GaAs), determinant in all transport phenomena.