RELEASING MATERIAL FOR THE GROWTH OF SHAPED SILICON-CRYSTALS

被引：17
|
作者：
MAEDA, Y
YOKOYAMA, T
HIDE, I
MATSUYAMA, T
SAWAYA, K
机构：
[1] Hoxan Corp, Hoxan Research Lab,, Sapporo, Jpn, Hoxan Corp, Hoxan Research Lab, Sapporo, Jpn
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 02期
关键词：
D O I：
10.1149/1.2108594
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
SEMICONDUCTING SILICON
引用
收藏
页码：440 / 443
页数：4
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