Quantum regime for in-plane magnetoresistance of double quantum wells

被引：5
|
作者：
Vasko, FT
Raichev, OE
机构：
[1] Institute of Semiconductor Physics, National Academy of Sciences of the Ukraine, Kiev-28, 252650
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.52.16349
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical conductivity of the tunnel-coupled double quantum wells under an in-plane magnetic field is studied theoretically. Comparison of the magnetic-field-induced suppression of the resistance resonance peak with the experimental data indicates the quantum regime for electron transport, when the tunnel coupling is partly suppressed by the scattering.
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页码：16349 / 16352
页数：4
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