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- [2] AN EFFECT OF SPONTANEOUS FLUCTUATIONS ON THE SEMICONDUCTOR INJECTION-LASER EMISSION-SPECTRUM[J]. KVANTOVAYA ELEKTRONIKA, 1988, 15 (11): : 2178 - 2182GULYAEV, YVSURIS, RATAGER, AAELENKRIG, BB
- [3] AN ASYMMETRICAL EMISSION-SPECTRUM OF AN INJECTION-LASER WITH AN EXTERNAL OPTICAL FEEDBACK[J]. KVANTOVAYA ELEKTRONIKA, 1988, 15 (02): : 247 - 252GULYAEV, YVDURAEV, VPMAZUR, AVMORSHNEV, SKRYABOV, ASFRANTSESSON, AV
- [4] CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) : 910 - 911ITO, MKIMURA, T
- [5] A FINE-STRUCTURE OF THE INJECTION-LASER EMISSION-SPECTRUM AND ITS RELATION WITH THE MULTIFREQUENCY OPERATION[J]. KVANTOVAYA ELEKTRONIKA, 1989, 16 (05): : 918 - 922AVETISOV, VGNADEZHDINSKII, AIKHUSNUTDINOV, AN
- [6] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4457 - 4461HENRY, CHLOGAN, RABERTNESS, KA
- [7] DEPENDENCE OF REFRACTIVE-INDEX OF A SEMICONDUCTOR ON DIRECTION OF CARRIER DRIFT[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 433 - 436ALMAZOV, LA
- [8] TEMPERATURE AND DENSITY DEPENDENCE OF REFRACTIVE-INDEX OF PURE LIQUIDS[J]. JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS II, 1972, 68 (06): : 1001 - &REISLER, EEISENBER.HMINTON, AP
- [9] DEPENDENCE OF MOLECULAR-LASER EFFICIENCY ON EMISSION-SPECTRUM[J]. JETP LETTERS, 1975, 21 (06) : 148 - 150IGOSHIN, VIORAEVSKII, AN
- [10] DENSITY DEPENDENCE OF REFRACTIVE-INDEX AND STATIC DIELECTRIC-CONSTANT[J]. PHYSICA B & C, 1986, 139 (1-3): : 126 - 130DIGUET, R