DEPENDENCE OF REFRACTIVE-INDEX OF A SEMICONDUCTOR ON DIRECTION OF CARRIER DRIFT

被引：0

作者：

ALMAZOV, LA ^{[1
]}

机构：

[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：433 / 436

页数：4

共 50 条

[1] CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS
ITO, M
KIMURA, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) : 910 - 911
[2] TEMPERATURE AND INTENSITY DEPENDENCE OF THE REFRACTIVE-INDEX OF A COMPOUND SEMICONDUCTOR
JENSEN, B
TORABI, A
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (09) : 1395 - 1401
[3] SATURATION EFFECTS IN THE CARRIER-INDUCED REFRACTIVE-INDEX IN A SEMICONDUCTOR GAIN MEDIUM
CHOW, WW
DENTE, GC
DEPATIE, D
[J]. OPTICS LETTERS, 1987, 12 (01) : 25 - 27
[4] INJECTED-CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN SEMICONDUCTOR-LASERS
OLSSON, A
TANG, CL
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 24 - 26
[5] TEMPERATURE DEPENDENCE OF REFRACTIVE-INDEX WATER
MITRA, SK
VARSHNEY.NC
DASS, N
[J]. JOURNAL OF CHEMICAL PHYSICS, 1972, 57 (04): : 1798 - &
[6] THEORY OF INTENSITY DEPENDENCE OF REFRACTIVE-INDEX
MOSS, TS
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 101 (02): : 555 - 561
[7] REFRACTIVE-INDEX DEPENDENCE ON MOLECULAR MASS
HIGGINS, RH
[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1987, 193 : 64 - PHYS
[8] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS
HENRY, CH
LOGAN, RA
BERTNESS, KA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4457 - 4461
[9] REFRACTIVE-INDEX STRUCTURE CONSTANT DEPENDENCE ON HEIGHT
BENYOSEF, N
TIROSH, E
WEITZ, A
PINSKY, E
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1979, 69 (11) : 1616 - 1618
[10] REFRACTIVE-INDEX - WAVELENGTH AND TEMPERATURE-DEPENDENCE
LIVA, M
[J]. MICROSCOPE, 1981, 29 (02): : 93 - 101

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