MATHEMATICAL SIMULATION OF DIFFUSION OF 2 CHARGED IMPURITIES IN A SEMICONDUCTOR ALLOWING FOR AN INTERNAL ELECTRIC-FIELD

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作者：

GALANIN, MP

MALKOVICH, RS

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 08期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：911 / 914

页数：4

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