LARGE-SIGNAL INSULATED-GATE FIELD-EFFECT TRANSISTOR MODEL FOR COMPUTER CIRCUIT SIMULATION

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作者：
HODGES, DA
SHICHMAN, H
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IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1968年 / SC 3卷 / 01期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：40 / &
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