COMPARATIVE STUDY OF SI(111), SILICON-OXIDE, SIC AND SI3N4 SURFACES BY SECONDARY ION MASS-SPECTROSCOPY (SIMS)

被引：50
|
作者：
BENNINGHOVEN, A [1 ]
SICHTERMANN, W [1 ]
STORP, S [1 ]
机构：
[1] UNIV MUNSTER,PHYS INST,SCHLOSS PL 7,D-4400 MUNSTER,FED REP GER
来源：
THIN SOLID FILMS | 1975年 / 28卷 / 01期
关键词：
D O I：
10.1016/0040-6090(75)90275-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：59 / 64
页数：6
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