DEPTH-PROFILING OF ORGANIC LAYERS ON MICROPARTICLES WITH SNMS

被引:3
|
作者
BENTZ, JWG [1 ]
EWINGER, HP [1 ]
GOSCHNICK, J [1 ]
KANNEN, G [1 ]
ACHE, HJ [1 ]
机构
[1] KERNFORSCHUNGSZENTRUM KARLSRUHE GMBH,INST RADIOCHEM,POSTFACH 3640,W-7500 KARLSRUHE 1,GERMANY
来源
关键词
D O I
10.1007/BF00321395
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Previous work on the quanti cation and localization of organically bound elements with plasma-based SNMS for the characterization of microparticles has been continued. Relative detection factors for 10 elements have been determined. Except for lead and bromine a principle proportionality to atomic ionization probabilities is shown. A moderate matrix dependence of less than 40% variation was found even when inorganic and organic materials are included. For depth calibration, erosion rates of organic materials were determined from the time interval necessary to sputter through planar single-layers and Langmuir-Blodgett multi-layer systems with known thickness, as well as from gravimetric powder measurements. Depth propagation rates were 0.7 nm . sec-1 for polymers and 2.3 nm . sec-1 for aromatic compounds, when 400 eV argon ion bombardment with 0.7 mA . cm-2 Was used. A depth resolution of approximately 30 nm has been obtained. Model particles of 5 mum size have been coated with fluoranthene. Inspection with SNMS revealed an incomplete coating covering only 20% of the microparticle surface with an average thickness of the partial coating of 300 nm. Subsequent characterization using laser-induced fluorimetry confirmed the amount of fluoranthene coating measured by SNMS.
引用
收藏
页码:123 / 127
页数:5
相关论文
共 50 条
  • [41] Molecular depth-profiling of polycarbonate with low-energy Cs+ ions
    Mine, Nicolas
    Douhard, Bastien
    Brison, Jeremy
    Houssiau, Laurent
    [J]. RAPID COMMUNICATIONS IN MASS SPECTROMETRY, 2007, 21 (16) : 2680 - 2684
  • [42] Depth-profiling of implanted 28Si by (α,α) and (α,p0) reactions
    Demarche, J.
    Yedji, M.
    Terwagne, G.
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (11-12): : 2107 - 2110
  • [43] Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers
    Eijt, S. W. H.
    Zhu, H.
    Schut, H.
    Tijssen, M.
    Zeman, M.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 2010, 7 (3-4): : 632 - 635
  • [44] Depth-profiling alkyl chain order in unsaturated lipid monolayers on water
    Yu, Chun-Chieh
    Seki, Takakazu
    Chiang, Kuo-Yang
    Wang, Yongkang
    Bonn, Mischa
    Nagata, Yuki
    [J]. JOURNAL OF CHEMICAL PHYSICS, 2024, 160 (11):
  • [45] Non-destructive elemental depth-profiling with muonic X-rays
    Kubo, M. K.
    Moriyama, H.
    Tsuruoka, Y.
    Sakamoto, S.
    Koseto, E.
    Saito, T.
    Nishiyama, K.
    [J]. JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY, 2008, 278 (03) : 777 - 781
  • [46] Defect depth-profiling in kesterite absorber by means of chemical etching and surface analysis
    Tiwari, Kunal J.
    Fonoll Rubio, Robert
    Giraldo, Sergio
    Calvo-Barrio, Lorenzo
    Izquierdo-Roca, Victor
    Placidi, Marcel
    Sanchez, Yudania
    Perez-Rodriguez, Alejandro
    Saucedo, Edgardo
    Jehl Li-Kao, Zacharie
    [J]. APPLIED SURFACE SCIENCE, 2021, 540
  • [47] DEPTH-PROFILING OF HYDROGEN AND HELIUM-ISOTOPES BY MEANS OF THE ERD EXB TECHNIQUE
    ROSS, GG
    LEBLANC, L
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 62 (04): : 484 - 492
  • [48] Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures
    Godlewski, M
    Goldys, EM
    Phillips, MR
    Langer, R
    Barski, A
    [J]. JOURNAL OF MATERIALS RESEARCH, 2000, 15 (02) : 495 - 501
  • [49] Cathodoluminescence depth-profiling studies of GaN/AlGaN quantum-well structures
    M. Godlewski
    E. M. Goldys
    M. R. Phillips
    R. Langer
    A. Barski
    [J]. Journal of Materials Research, 2000, 15 : 495 - 501
  • [50] DEPTH-PROFILING OF DOPANT REGIONS IN SILICON WITH THERMAL-WAVE MICROSCOPY.
    Rosencwaig, Allan
    [J]. Journal of Photoacoustics, 1982, 1 (01): : 75 - 85