THE NUMERICAL-SIMULATION OF DIAMOND SYNTHESIS FROM ACETYLENE FLAMES

被引：27
|
作者：
MATSUI, Y
YABE, H
HIROSE, Y
机构：
[1] MITSUBISHI ELECTR CORP,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
[2] NIPPON INST TECHNOL,DEPT ELECT ENGN & ELECTR,MINAMI SAITAMA,SAITAMA 345,JAPAN
来源：
DIAMOND AND RELATED MATERIALS | 1993年 / 2卷 / 01期
关键词：
D O I：
10.1016/0925-9635(93)90135-O
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The mechanism of diamond growth from an oxy-acetylene flame is discussed using a numerical simulation which includes both gaseous reactions in the low-temperature boundary layer near the substrate and detailed surface reactions on the growing film. It is found from these simulations that the CH3-precursor model is sufficient to explain the growth rate for wide ranges in the substrate temperature T(s) and the gas mixture ratio, and that the fractional density of the surface adsorbing bond (the overall sticking probability) is about 10(-3) at T(s) = 1250 K. It is also shown that the growth rates for other deposition methods are satisfactorily explained by the present model.
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页码：7 / 13
页数：7
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