FABRICATION OF II-VI SEMICONDUCTOR QUANTUM-WELL STRUCTURES IN ZNCDSSE ALLOY SYSTEMS

被引：6
|
作者：
FUJITA, S
KAWAKAMI, Y
FUJITA, S
机构：
[1] Department of Electrical Engineering, Kyoto University
来源：
PHYSICA B | 1993年 / 191卷 / 1-2期
关键词：
D O I：
10.1016/0921-4526(93)90178-9
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An effort is made to investigate the physical parameters of ZnCdSSe semiconductors, towards designing quantum well (QW) laser structures capable of growing coherently on III-V semiconductor substrates and of effectively confining carriers and light. As examples, ZnCdSe/ZnSSe or ZnCdSSe/ZnCdS QWs on GaAs substrates and ZnCdSSe/ZnSSe or ZnCdSSe/ZnCdS QWs on GaP substrates are proposed as promising candidates operating in the blue-green/blue and near-ultraviolet spectral regions, respectively. For ZnCdSe/ZnSSe-based QWs, successful layer-by-layer growth of entire structures under in situ observation of reflection high-energy electron diffraction (RHEED) intensity oscillations and optically pumped laser characteristics strongly support the high potential of this kind of multilayered structures for future optoelectronic device applications.
引用
收藏
页码：57 / 70
页数：14
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