FABRICATION OF II-VI SEMICONDUCTOR QUANTUM-WELL STRUCTURES IN ZNCDSSE ALLOY SYSTEMS

An effort is made to investigate the physical parameters of ZnCdSSe semiconductors, towards designing quantum well (QW) laser structures capable of growing coherently on III-V semiconductor substrates and of effectively confining carriers and light. As examples, ZnCdSe/ZnSSe or ZnCdSSe/ZnCdS QWs on GaAs substrates and ZnCdSSe/ZnSSe or ZnCdSSe/ZnCdS QWs on GaP substrates are proposed as promising candidates operating in the blue-green/blue and near-ultraviolet spectral regions, respectively. For ZnCdSe/ZnSSe-based QWs, successful layer-by-layer growth of entire structures under in situ observation of reflection high-energy electron diffraction (RHEED) intensity oscillations and optically pumped laser characteristics strongly support the high potential of this kind of multilayered structures for future optoelectronic device applications.