METASTABILITY IN P-TYPE AND N-TYPE A-SIH INVESTIGATED BY KEV-ELECTRON IRRADIATION

被引：4
|
作者：
SCHOLZ, A
SCHEHR, B
SCHRODER, B
机构：
[1] Fachbereich Physik der Universität Kaiserslautern, D-6750 Kaiserslautern
来源：
SOLID STATE COMMUNICATIONS | 1993年 / 85卷 / 09期
关键词：
D O I：
10.1016/0038-1098(93)90665-A
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Dynamics of metastable defect creation and electronic stability of p- and n-doped hydrogenated amorphous silicon were investigated systematically by keV-electron irradiation. Dynamic behaviour and saturation level of degradation are seen to behave equally to intrinsic a-Si:H and not to be influenced by dopant atoms. In contrast to this considerable changes of the dark conductivity are observed. A simple model is presented and successfully tested to explain the corresponding Fermi level shift by a relaxation process of electrons and holes.
引用
收藏
页码：753 / 757
页数：5
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