Integration of sol-gel derived PZT with SOS technology

被引：1

作者：

Obhi, JS ^{[1
]}

Bland, TA ^{[1
]}

Patel, A ^{[1
]}

Kirby, PB ^{[1
]}

Kerr, J ^{[1
]}

机构：

[1] GEC LTD,PLESSEY SEMICOND,LINCOLN LN6 3LF,ENGLAND

来源：

INTEGRATED FERROELECTRICS | 1995年 / 10卷 / 1-4期

关键词：

D O I：

10.1080/10584589508012274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PZT thin films up to 3000 Angstrom have been grown via a sol-gel route onto metallized sapphire substrates. Sharp X-ray peaks of perovskite indicating mixed or highly (111) oriented PZT were obtained and a link made to the thermal processing applied. Ferroelectric properties of these samples are discussed in light of development of a 4 kbit NVRAM demonstrator on SOS, which is also introduced. The relative merits of these properties along with endurance measurements are discussed with particular emphasis on the implications for complete integration with conventional SOS - based technology, in the context of non-volatile memory applications.

引用

页码：165 / &

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