TWIN BOUNDARIES IN C54-TISI2

被引：7
|
作者：
RAJAN, K
机构：
[1] Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, 12180-3590, NY
来源：
METALLURGICAL TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE | 1990年 / 21卷 / 09期
关键词：
D O I：
10.1007/BF02646978
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A large-grained microstructure of C54-TiSi2 has been produced by rapid thermal annealing of Ti/Si thin film couples. Unlike the metastable C49-TiSi2 phase, which is heavily faulted, the C54-TiSi2 is relatively fault-free. We have, however, observed for the first time the presence of twins in C54-TiSi2. The presence of twinning is explained by an atomic model for polytypism in this structure. The faceting of twin boundaries and the dissociation of grain boundaries have also been observed for the first time in C54-TiSi2. It is proposed that the latter observations are related to boundary migration. © 1990 The Metallurgical of Society of AIME.
引用
收藏
页码：2317 / 2322
页数：6
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