LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M

被引：39

|

作者：

KAMINOW, IP

EISENSTEIN, G

STULZ, LW

DENTAI, AG

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 01期

关键词：

D O I：

10.1109/JQE.1983.1071724

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：78 / 82

页数：5

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