ETCH-INDUCED MOS GUARD-RING-PROTECTED SCHOTTKY-BARRIER DIODES

被引：3
|
作者：
SREENATH, RN [1 ]
CHANDRA, MM [1 ]
SURYAN, G [1 ]
机构：
[1] INDIAN INST SCI, DEPT PHYS, BANGALORE 560012, KARNATAKA, INDIA
来源：
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1984年 / 131卷 / 02期
关键词：
SEMICONDUCTOR DEVICES; MOS - SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER;
D O I：
10.1049/ip-i-1.1984.0018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple technique for the fabrication of Schottky-barrier diodes with near ideal characteristics is discussed. The fabrication employs a two mask process with an isotropic etching step to round off the corners of the metallurgical junction. A self-aligned MOS guard ring is also incorporated, the use of which is optional.
引用
收藏
页码：63 / 65
页数：3
相关论文
共 50 条
12345