FUNDAMENTAL MAGNETOTRANSPORT PROPERTIES OF A GAAS-ALGAAS MODULATION-DOPED HETEROSTRUCTURE

被引:0
|
作者
CHMIELOWSKI, M
GLINSKI, M
ZHUANG, WH
LIANG, GB
SUN, DZ
KONG, MY
PLESIEWICZ, W
DIETL, T
SKOSKIEWICZ, T
机构
[1] INT LAB HIGH MAGNET FIELDS & LOW TEMP,WROCLAW,POLAND
[2] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA
[3] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-02668 WARSAW,POLAND
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:327 / 329
页数:3
相关论文
共 50 条
  • [31] High electron mobility in AlGaAs/GaAs modulation-doped structures
    Saku, Tadashi
    Hirayama, Yoshiro
    Horikoshi, Yoshiji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (05): : 902 - 905
  • [32] Photoellipsometry studies of delta-doped GaAs and modulation-doped AlGaAs/GaAs heterojunction structures
    Xiong, YM
    Wong, CC
    Saitoh, T
    THIN SOLID FILMS, 1995, 270 (1-2) : 300 - 306
  • [33] INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS
    HURWITZ, CE
    ROSSI, JA
    HSIEH, JJ
    WOLFE, CM
    APPLIED PHYSICS LETTERS, 1975, 27 (04) : 241 - 243
  • [34] HOPPING CONDUCTION IN A FREESTANDING GAAS-ALGAAS HETEROSTRUCTURE WIRE
    HASKO, DG
    CLEAVER, JRA
    AHMED, H
    SMITH, CG
    DIXON, JE
    APPLIED PHYSICS LETTERS, 1993, 62 (20) : 2533 - 2535
  • [35] A NEW GROWTH TECHNIQUE FOR MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURES BY MOCVD
    KASAI, K
    KOMENO, J
    TAKIKAWA, M
    NAKAI, K
    OZEKI, M
    JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) : 659 - 662
  • [36] HIGH ELECTRON-MOBILITY IN ALGAAS/GAAS MODULATION-DOPED STRUCTURES
    SAKU, T
    HIRAYAMA, Y
    HORIKOSHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (05): : 902 - 905
  • [37] HIGH-MOBILITY INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    SAKU, T
    HORIKOSHI, Y
    TARUCHA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (9A): : 4837 - 4842
  • [38] LARGE LATERAL PHOTOVOLTAIC EFFECT IN MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
    TABATABAIE, N
    MEYNADIER, MH
    NAHORY, RE
    HARBISON, JP
    FLOREZ, LT
    APPLIED PHYSICS LETTERS, 1989, 55 (08) : 792 - 794
  • [40] A SIMPLE-MODEL FOR THE CHARACTERISTICS OF GAAS/ALGAAS MODULATION-DOPED DEVICES
    LONG, AR
    DAVIES, JH
    KINSLER, M
    VALLIS, S
    HOLLAND, MC
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (08) : 1581 - 1589