共 50 条
- [1] INFLUENCE OF SUBSTRATE-TEMPERATURE AND INAS MOLE FRACTION ON THE INCORPORATION OF INDIUM DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAAS SINGLE QUANTUM WELLS ON GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (01): : 111 - 115
- [5] INDIUM DESORPTION FROM STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1124 - 1128
- [9] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS (331) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 759 - 760
- [10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331) JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3766 - 3771