EXPLOSIVE CRYSTALLIZATION IN SINGLE-CRYSTAL SILICON AMORPHIZED BY IMPLANTATION

被引:7
|
作者
BENSAHEL, D [1 ]
AUVERT, G [1 ]
DUPUY, M [1 ]
机构
[1] LAB ELECTR & TECHNOL INFORMAT,CRM,F-38041 GRENOBLE,FRANCE
关键词
D O I
10.1063/1.331716
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:395 / 397
页数:3
相关论文
共 50 条
  • [1] RESTORATION OF SINGLE-CRYSTAL STRUCTURE OF SILICON SURFACE, AMORPHIZED BY ION-IMPLANTATION, BY ARGON LASER-BEAM
    KLIMENKO, AG
    KLIMENKO, EA
    DONIN, VI
    KVANTOVAYA ELEKTRONIKA, 1975, 2 (10): : 2356 - 2358
  • [2] Modeling of ion implantation in single-crystal silicon
    Nucl Instrum Methods Phys Res Sect B, 1-4 (173):
  • [3] MODELING OF ION-IMPLANTATION IN SINGLE-CRYSTAL SILICON
    TASCH, AF
    YANG, SH
    MORRIS, SJ
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 102 (1-4): : 173 - 179
  • [4] Single-Crystal Silicon Optical Fiber by Direct Laser Crystallization
    Ji, Xiaoyu
    Lei, Shiming
    Yu, Shih-Ying
    Cheng, Hiu Yan
    Liu, Wenjun
    Poilvert, Nicolas
    Xiong, Yihuang
    Dabo, Ismaila
    Mohney, Suzanne E.
    Badding, John V.
    Gopalan, Venkatraman
    ACS PHOTONICS, 2017, 4 (01): : 85 - 92
  • [5] BORON IMPLANTATION INTO SILICON AMORPHIZED BY TIN IMPLANTATION
    DELFINO, M
    MORGAN, AE
    SADANA, DK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 363 - 368
  • [6] DEPOSITION OF SINGLE-CRYSTAL SILICON FILMS ON COLD SINGLE-CRYSTAL SILICON SUBSTRATES
    AISENBER.S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (05): : 172 - &
  • [7] Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon
    Wu, YQ
    Yang, XY
    Xu, YB
    ACTA MATERIALIA, 1999, 47 (08) : 2431 - 2436
  • [8] A universal ion implantation model for all species into single-crystal silicon
    Chen, Y
    Wang, G
    Li, D
    Oak, SK
    Shrivastav, G
    Rubin, L
    Tasch, A
    Banerjee, SK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) : 1519 - 1525
  • [9] MONTE-CARLO SIMULATION OF BORON IMPLANTATION INTO SINGLE-CRYSTAL SILICON
    KLEIN, KM
    PARK, C
    TASCH, AF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) : 1614 - 1621
  • [10] Cross-sectional electron microscopy observation on the amorphized indentation region in [001] single-crystal silicon
    Stt. Key Lab. Fatigue Fracture Mat., Inst. Metal Res., Chinese Acad. S., Shenyang, China
    不详
    Acta Mater, 8 (2431-2436):