ION-ASSISTED ETCHING OF SILICON BY MOLECULAR CHLORINE

被引：76
|
作者：
SANDERS, FHM [1 ]
KOLFSCHOTEN, AW [1 ]
DIELEMAN, J [1 ]
HARING, RA [1 ]
HARING, A [1 ]
DEVRIES, AE [1 ]
机构：
[1] FOM,INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1984年 / 2卷 / 02期
关键词：
D O I：
10.1116/1.572601
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：487 / 491
页数：5
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