A 55NS CMOS EEPROM

被引：0
|
作者：
ZEMAN, R
HO, C
CHANG, T
机构：
来源：
ISSCC DIGEST OF TECHNICAL PAPERS | 1984年 / 27卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：144 / 145
页数：2
相关论文
共 50 条
  • [21] A BACK BIASED 0.65 MU-M LEFFN CMOS EEPROM TECHNOLOGY FOR NEXT GENERATION SUB-7 NS PROGRAMMABLE LOGIC DEVICES
    HART, MJ
    CACHARELIS, PJ
    CARPENTER, RD
    TSUEI, DG
    MADURAWE, RU
    SANDHU, BS
    SMOLEN, RG
    DUMLAO, AP
    GARVERICK, TL
    MCFARLANE, T
    MANLEY, MH
    MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 613 - 616
  • [22] AN 80-NS 32K EEPROM USING THE FETMOS CELL
    KUO, C
    YEARGAIN, JR
    DOWNEY, WJ
    ILGENSTEIN, KA
    JORVIG, JR
    SMITH, SL
    BORMANN, AR
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (05) : 821 - 827
  • [23] 1-MBIT EEPROM HITS 120-NS ACCESS TIME
    WILSON, R
    COMPUTER DESIGN, 1990, 29 (13): : 106 - 106
  • [24] CMOS MULTIPLIERS CYCLE IN 45 NS
    MYRVAAGNES, R
    ELECTRONIC PRODUCTS MAGAZINE, 1986, 28 (19): : 30 - 30
  • [25] A low power CMOS compatible embedded EEPROM for passive RFID tag
    Lee, Kyoung-Su
    Chun, Jung-Hoon
    Kwon, Kee-Won
    MICROELECTRONICS JOURNAL, 2010, 41 (10) : 662 - 668
  • [26] 64 kbit CMOS EEPROM 'HN58C65'.
    Kamigaki, Yoshiaki
    Furusawa, Kazunori
    Hagiwara, Takaaki
    Hitachi Review, 1986, 35 (05): : 267 - 270
  • [27] A 1.5 V SINGLE-SUPPLY ONE-TRANSISTOR CMOS EEPROM
    GERBER, B
    MARTIN, JC
    FELLRATH, J
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (03) : 195 - 200
  • [28] AN EXPERIMENTAL 4-MBIT CMOS EEPROM WITH A NAND-STRUCTURED CELL
    MOMODOMI, M
    ITOH, Y
    SHIROTA, R
    IWATA, Y
    NAKAYAMA, R
    KIRISAWA, R
    TANAKA, T
    ARITOME, S
    ENDOH, T
    OHUCHI, K
    MASUOKA, F
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) : 1238 - 1243
  • [29] CMOS ARRAY BREAKS 1-NS
    ZOLLO, S
    ELECTRONICSWEEK, 1985, 58 (04): : 55 - 56
  • [30] ADDING ANALOG, EPROM AND EEPROM MODULES TO CMOS LOGIC TECHNOLOGY - HOW MODULAR
    PATERSON, J
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 413 - 416
12345