EFFECTIVE CHARGE CARRIER LIFETIME IN SILICON P-I-N JUNCTION DETECTORS

被引:10
|
作者
COLEMAN, JA
SWARTZENDRUBER, LJ
机构
关键词
D O I
10.1109/TNS.1966.4324105
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:240 / +
页数:1
相关论文
共 50 条
  • [21] A COMPARATIVE-STUDY OF METHODS OF MEASURING CARRIER LIFETIME IN P-I-N DEVICES
    DERDOURI, M
    LETURCQ, P
    MUNOZYAGUE, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (11) : 2097 - 2101
  • [22] Carrier lifetime recombination measurement by conductivity modulation for power p-i-n diode
    Oussalah, S
    Jerisian, R
    1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1999, : 106 - 109
  • [23] NOISE IN P-I-N JUNCTION DIODES
    PERALA, RA
    VANDERZI.A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 172 - &
  • [24] Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors
    Pochet, T.
    Ilie, A.
    Brambilla, A.
    Equer, B.
    IEEE Transactions on Nuclear Science, 1996, 43 (3 pt 2): : 1452 - 1457
  • [25] Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors
    Whitlow, HJ
    Roosendaal, SJ
    El Bouanani, M
    Ghetti, R
    Johnston, PN
    Jakobsson, B
    Hellborg, R
    Petersson, H
    Omling, P
    Wang, ZG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 135 (1-4): : 523 - 531
  • [26] Sensitivity measurements of thick amorphous-silicon p-i-n nuclear detectors
    Pochet, T
    Ilie, A
    Brambilla, A
    Equer, B
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1996, 43 (03) : 1452 - 1457
  • [27] RADIOGRAPHIC INSPECTION DEVICE USING SOLID-STATE P-I-N JUNCTION DETECTORS
    BAILY, NA
    CLEARY, FW
    ROBERTSON, GD
    INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1964, 15 (09): : 523 - &
  • [28] Effects of energy deposition by nuclear scattering in silicon p-i-n diode detectors
    Lund Inst of Technology, Lund, Sweden
    Nucl Instrum Methods Phys Res Sect B, 1-4 (523-531):
  • [29] Dead layer on silicon p-i-n diode charged-particle detectors
    Wall, B. L.
    Amsbaugh, J. F.
    Beglarian, A.
    Bergmann, T.
    Bichsel, H. C.
    Bodine, L. I.
    Boyd, N. M.
    Burritt, T. H.
    Chaoui, Z.
    Corona, T. J.
    Doe, P. J.
    Enomoto, S.
    Harms, F.
    Harper, G. C.
    Howe, M. A.
    Martin, E. L.
    Parno, D. S.
    Peterson, D. A.
    Petzold, L.
    Renschler, P.
    Robertson, R. G. H.
    Schwarz, J.
    Steidl, M.
    van Wechel, T. D.
    vanDevender, B. A.
    Wuestling, S.
    Wierman, K. J.
    Wilkerson, J. F.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2014, 744 : 73 - 79
  • [30] Role of junction depth in light emission from silicon p-i-n LEDs
    Piccolo, G.
    Sammak, A.
    Hueting, R. J. E.
    Schmitz, J.
    Nanver, L. K.
    2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC), 2013, : 119 - 122