EFFECTIVE CHARGE CARRIER LIFETIME IN SILICON P-I-N JUNCTION DETECTORS

被引：10
|
作者：
COLEMAN, JA
SWARTZENDRUBER, LJ
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 03期
关键词：
D O I：
10.1109/TNS.1966.4324105
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：240 / +
页数：1
相关论文
共 50 条
  • [1] On the effective carrier lifetime of a silicon p-i-n diode optical modulator
    Zheng, D. W.
    Smith, B. T.
    Dong, J.
    Asghari, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (06)
  • [2] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE
    HOFFMANN, A
    SCHUSTER, K
    SOLID-STATE ELECTRONICS, 1964, 7 (10) : 717 - 724
  • [3] Silicon p-i-n Junction Fibers
    He, Rongrui
    Day, Todd D.
    Krishnamurthi, Mahesh
    Sparks, Justin R.
    Sazio, Pier J. A.
    Gopalan, Venkatraman
    Badding, John V.
    ADVANCED MATERIALS, 2013, 25 (10) : 1461 - 1467
  • [4] P-I-N junction in Silicon Nanowires
    Foo, K. L.
    Rusli
    Yu, M. B.
    Singh, N.
    Buddharaju, K. D.
    Sun, Y. S.
    Chan, L.
    Ng, C. M.
    2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 1137 - +
  • [5] STUDY OF THE CHARGE CARRIER COLLECTION COEFFICIENT OF SILICON p-i-n PHOTODIODES
    Kukurudziak, Mykola S.
    Maistruk, Eduard V.
    EAST EUROPEAN JOURNAL OF PHYSICS, 2024, (01): : 386 - 392
  • [6] Carrier-Induced Silicon Bragg Grating Filters With a p-i-n Junction
    Fang, Qing
    Song, Jun Feng
    Tu, Xiaoguang
    Jia, Lianxi
    Luo, Xianshu
    Yu, Mingbin
    Lo, Guo Qiang
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 25 (09) : 810 - 812
  • [7] Carrier collection characteristics of microcrystalline silicon-germanium p-i-n junction solar cells
    Matsui, T.
    Ogata, K.
    Chang, C. W.
    Isomura, M.
    Kondo, M.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2468 - 2471
  • [8] CHARGE COLLECTION RESPONSE OF SI GAAS P-I-N DETECTORS
    SELLIN, PJ
    BUTTAR, CM
    MANOLOPOULOS, S
    BERWICK, K
    BROZEL, MR
    COWPERTHWAITE, M
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (04) : 247 - 253
  • [9] Neutron irradiation of Hydrogenated Amorphous Silicon p-i-n diodes and charge selective contacts detectors
    Menichelli, M.
    Bizzarri, M.
    Boscardin, M.
    Calcagnile, L.
    Caprai, M.
    Caricato, A. P.
    Cirrone, G. A. P.
    Crivellari, M.
    Cupparo, I.
    Cuttone, G.
    Dunand, S.
    Fano, L.
    Gianfelici, B.
    Hammad, O.
    Ionica, M.
    Kanxheri, K.
    Large, M.
    Maruccio, G.
    Monteduro, A. G.
    Moscatelli, F.
    Morozzi, A.
    Papi, A.
    Passeri, D.
    Pedio, M.
    Petasecca, M.
    Petringa, G.
    Peverini, F.
    Quarta, G.
    Rizzato, S.
    Rossi, A.
    Rossi, G.
    Scorzoni, A.
    Servoli, L.
    Talamonti, C.
    Verzellesi, G.
    Wyrsch, N.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2023, 1052
  • [10] STUDYING P-I-N SILICON DETECTORS WITH A TRAVELING LIGHT PROBE
    VASILEV, VS
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES-USSR, 1967, (04): : 952 - &
12345