THEORY OF ABSORPTION OF ELECTROMAGNETIC RADIATION BY HOPPING IN N-TYPE SILICON + GERMANIUM

被引：52

作者：

BLINOWSKI, J

MYCIELSKI, J

机构：

来源：

PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 136卷 / 1A期

关键词：

D O I：

10.1103/PhysRev.136.A266

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：A266 / &

共 50 条

[41] FAR INFRARED RESONANT ABSORPTION IN N-TYPE SILICON
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[50] PHONON-INDUCED ELECTRON TRANSITIONS IN N-TYPE GERMANIUM AND SILICON
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