BROAD-BAND GAAS-FET OPTICAL FRONT-END CIRCUIT UP TO 5.6 GHZ

被引：9

作者：

OHKAWA, N

YAMADA, J

HAGIMOTO, K

机构：

[1] NTT, Yokosuka, Jpn, NTT, Yokosuka, Jpn

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 05期

关键词：

OPTOELECTRONIC DEVICES - SEMICONDUCTING GALLIUM ARSENIDE;

D O I：

10.1049/el:19860178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Design and performance of transimpedance preamplifiers for multi-gigabit/s optical repeaters are reported using 0. 3 mu m gate length GaAs FETs and a Ge-APD with a sensitive area of 30 mu m diam. Through reduction of parasitic inductance and stray capacitance in chip assembly, a 3 db down bandwidth of 8. 2 GHz is achieved without a Ge-APD. A 3 db down bandwidth of 5. 6 GHz and good pulse response to 6. 5 Gbit/s RZ pattern optical signals are achieved in an optical front-end circuit with a Ge-APD.

引用

页码：259 / 261

页数：3

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