CURRENT-VOLTAGE CHARACTERISTICS OF ION-IMPLANTED METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

被引:2
|
作者
KWONG, DL
机构
关键词
D O I
10.1063/1.335345
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4798 / 4802
页数:5
相关论文
共 50 条
  • [1] ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    GLEASON, KR
    DIETRICH, HB
    HENRY, RL
    COHEN, ED
    BARK, ML
    APPLIED PHYSICS LETTERS, 1978, 32 (09) : 578 - 581
  • [2] AN ION-IMPLANTED DIAMOND METAL-INSULATOR SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
    ZEISSE, CR
    HEWETT, CA
    NGUYEN, R
    ZEIDLER, JR
    WILSON, RG
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (11) : 602 - 604
  • [3] NEUTRON RADIATION EFFECTS IN GAAS ION-IMPLANTED METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    JANOUSEK, BK
    YAMADA, WE
    KRANTZ, RJ
    BLOSS, WL
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1678 - 1686
  • [4] OPTIMIZATION OF ION-IMPLANTED LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    FENG, M
    EU, VK
    KANBER, H
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1171 - 1176
  • [5] Simulation of current-voltage characteristics of a ferroelectric field-effect transistor
    Berman, LS
    SEMICONDUCTORS, 2001, 35 (11) : 1335 - 1339
  • [6] Simulation of current-voltage characteristics of a ferroelectric field-effect transistor
    L. S. Berman
    Semiconductors, 2001, 35 : 1335 - 1339
  • [7] Tunneling current-voltage characteristics of graphene field-effect transistor
    Ryzhii, Victor
    Ryzhii, Maxim
    Otsuji, Taiichi
    APPLIED PHYSICS EXPRESS, 2008, 1 (01)
  • [8] EFFECT OF PRESSURE ON CURRENT-VOLTAGE CHARACTERISTICS OF MECHANICAL METAL-SEMICONDUCTOR CONTACTS
    KUMAR, V
    RAM, S
    PARSHAD, R
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1977, 15 (03) : 176 - 181
  • [9] Current-voltage characteristics of a graphene-nanoribbon field-effect transistor
    Ryzhii, V.
    Ryzhii, M.
    Satou, A.
    Otsuji, T.
    Journal of Applied Physics, 2008, 103 (09):
  • [10] Current-voltage characteristics of a graphene-nanoribbon field-effect transistor
    Ryzhii, V.
    Ryzhii, M.
    Satou, A.
    Otsuji, T.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)