PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON EPITAXIAL LAYERS

被引：6

|

作者：

REIF, R

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 10期

关键词：

D O I：

10.1149/1.2115310

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2430 / 2435

页数：6

相关论文

共 50 条

[1] SILICON EPITAXIAL LAYERS BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
REIF, R
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 189 (APR-): : 45 - INOR
[2] PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON EPITAXIAL LAYERS
REIF, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (03) : C95 - C95
[3] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE
SHANFIELD, SR
REIF, R
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C81 - C81
[4] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE
KOBAYASHI, I
OGAWA, T
HOTTA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 336 - 342
[5] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF COPPER
AWAYA, N
ARITA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (08): : 1813 - 1817
[6] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF MOLYBDENUM
IANNO, NJ
PLASTER, JA
THIN SOLID FILMS, 1987, 147 (02) : 193 - 202
[7] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION - REVIEW
SINHA, AK
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C262 - C263
[8] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN
MAHOWALD, MA
IANNO, NJ
THIN SOLID FILMS, 1989, 170 (01) : 91 - 97
[9] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF FLUORINATED SILICON-NITRIDE
FUJITA, S
TOYOSHIMA, H
OHISHI, T
SASAKI, A
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L144 - L146
[10] CHEMICAL VAPOR-DEPOSITION OF SELECTIVE EPITAXIAL SILICON LAYERS
PAI, CS
KNOELL, RV
PAULNACK, CL
LANGER, PH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 971 - 976

← 1 2 3 4 5 →