POWER SATURATION CHARACTERISTICS OF HIGH ELECTRON-MOBILITY TRANSISTORS

被引：0
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作者：
GUPTA, AK
CHEN, RT
SOVERO, EA
HIGGINS, JA
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来源：
MICROWAVE JOURNAL | 1985年 / 28卷 / 05期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：56 / 56
页数：1
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