A NEW METHOD OF MEASURING INTERNAL-STRESS IN THIN-FILMS DEPOSITED ON SILICON BY RAMAN-SPECTROSCOPY

被引：9

|

作者：

IWAOKA, T

YOKOYAMA, S

OSAKA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 01期

关键词：

D O I：

10.1143/JJAP.24.112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：112 / 113

页数：2

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