GROWTH OF HIGH-PURITY AIN CRYSTALS

被引：373

作者：

SLACK, GA ^{[1
]}

MCNELLY, TF ^{[1
]}

机构：

[1] GEN ELECTRIC RES & DEV CTR, SCHENECTADY, NY 12301 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 34卷 / 02期

关键词：

D O I：

10.1016/0022-0248(76)90139-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：263 / 279

页数：17

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