SCHOTTKY-BARRIER HEIGHTS OF IR/P-SI AND IR/STRAINED P-SI1-XGEX JUNCTIONS

被引：8

作者：

NUR, O ^{[1
]}

SARDELA, MR ^{[1
]}

WILLANDER, M ^{[1
]}

TURAN, R ^{[1
]}

机构：

[1] MIDDLE EAST TECH UNIV, DEPT PHYS, ANKARA 06531, TURKEY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 04期

关键词：

D O I：

10.1088/0268-1242/10/4/029

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low barrier height Schottky diodes, Ir/p-Si and Ir/p-Si1-xGex, with x = 14%, have been investigated using current-voltage (I-V) analysis. The crystalline quality, the Ge fraction and the strain state of the Si1-xGex alloy were investigated using a high-resolution multicrystal x-ray diffractometer. The Schottky barrier height of the Ir/strained p-Si0.86Ge0.14 junction was found to be 70 meV smaller than that of the Ir/p-Si junction. The relationship between this barrier height difference and the energy band structure of Si/strained Si1-xGex is discussed.

引用

页码：551 / 555

页数：5

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