EFFECT OF STRAIN AND INTERFACE INTERDIFFUSION ON THE VALENCE BAND OFFSET AT SI/GE INTERFACES

被引：8
|
作者：
HYBERTSEN, MS
机构：
来源：
CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES | 1989年 / 148卷
关键词：
D O I：
10.1557/PROC-148-329
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：329 / 334
页数：6
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